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U.S. Department of Energy
Office of Scientific and Technical Information

Semiconductor lasers; Proceedings of the Meeting, Hamburg, Federal Republic of Germany, Sept. 23, 1988

Conference ·
OSTI ID:5034859
Recent theoretical and experimental investigations of semiconductor lasers are discussed in reviews and reports. Consideration is given to diode-laser optics, irregular spectral behavior measured with DFB lasers, a ridge-waveguide DFB laser operating at 1.5 microns and fabricated by single-step epitaxial growth, and the effect of broadening and barrier recombination on the operation of short-wavelength GaAs/AlGaAs quantum-well lasers. Also covered are phase-locked index-guided semiconductor-laser arrays, numerical analyses of transverse-mode competition in ridge-waveguide semiconductor lasers, microscopic approaches to amplitude modulation with small current signal, and structural and compositional characterizations of semiconductor multilayers by modulation spectroscopy.
OSTI ID:
5034859
Report Number(s):
CONF-8809387--
Country of Publication:
United States
Language:
English