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Analysis of testing the single-fluxon dynamics in a long Josephson junction by a dissipative spot

Journal Article · · Physical Review, B: Condensed Matter; (United States)
 [1];  [2]
  1. Dipartimento di Fisica, Universita di Salerno, I-84801 Baronissi (Saudi Arabia) (Italy)
  2. Institute for Thin Films and Ion Technology, Research Centre (KFA), D-52425 Juelich (Germany)
A change of the [ital I]-[ital V] characteristics of a long Josephson junction, operating in the zero-field single-fluxon regime, under the action of a hot spot'' (e.g., created by a focused electron beam) is calculated analytically by means of the perturbation theory, and also investigated numerically. The change of the average voltage at a given value of the bias current is calculated as a function of the hot spot-position. The overlap Josephson junction geometry is considered in detail, while the inline one is briefly discussed. A good accord between analytical and numerical results is found. The results are relevant for the interpretation of the low-temperature scanning electron microscopy experiments on imaging the fluxon dynamic states in a long Josephson junction.
OSTI ID:
5007673
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 49:18; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English