Magnetoresistance and magnetic properties of Co/Ir multilayers on MgO(110) substrates
- Institute of Applied Physics, University of Tsukuba, Tsukuba 305 (Japan)
- IBM Almaden Research Center, San Jose, California 95120-6099 (United States)
- Department of Physics, University of Illinois, Urbana, Illinois 61801 (United States)
A Co(12 {Angstrom})/Ir(16 {Angstrom}) multilayer deposited on MgO(110) is found to have a strong uniaxial anisotropy, comparable to bulk hcp-Co. Experimental results suggests the crystallographic relation of (100)[001]Co/(110)[001]Ir/(110)[001]MgO. A remarkable difference is seen between easy and hard axis magnetization processes, due to competition between the in-plane anisotropy and the exchange coupling. Considering the characteristics of the MH loops and magnetoresistance curves, we simulate the magnetization and magnetoresistance processes numerically. The results of our simulation indicate the existence of biquadratic coupling in Co/Ir(110). {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- University of Illinois
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 496569
- Report Number(s):
- CONF-961141--
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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