Sol-gel derived Ba(Mg{sub 1/3}Ta{sub 2/3})O{sub 3} thin films: Preparation and structure
- Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, Peoples Republic of (China)
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
Ba(Mg{sub 1/3}Ta{sub 2/3})O{sub 3} thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide and magnesium acetate in 2-methoxyethenol and subsequently hydrolysis, spin-coating and heat treatment. Transmission electron microscopy, x-ray diffraction and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500{degree}C), and well-crystallized thin films annealed below 1000{degree}C, a low volume fraction of 1:2 ordering domains were found in the samples and grow with increase of annealing temperature. {copyright} {ital 1997 Materials Research Society.}
- OSTI ID:
- 490178
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 3 Vol. 12; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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