Effect of electron irradiation on mechanical properties of aluminum single crystals at 80 K

Conference · Fri Feb 15 04:00:00 EST 1963

OSTI ID:4877388

Ono, K.; Meshii, M.; Kauffman, J. W.

Aluminum single crystals of 99.999% initial purity were irradiated at 80 deg K with 1-Mev electrons to total dose of 1.2 approximates 8 x 10/sup 17/ electrons/cm/sup 2/. The flow stress was measured at 77 deg K over the strain rate range 5 x 10/sup -4/ to 4 x 10/sup -3/ sec/sup -1/ and increased with irradiation. A larger increase for the higher strain rate was observed. The increase is interpreted to be due to interstitials which migrated to dislocations and were absorbed heterogeneously by making superjogs or kinks, which produce resistance to motion of the dislocations. An interruption of tensile test for a short time resulted in a yield drop which was found only in the irradiated crystals. This yield drop may be due to the Cottrell locking of the interstitial which were freed from impurity trapping sites by glide dislocations. Annealing at room temperature resulted in recovery of the hardening caused by the irradiation. Migration of vacancies or divacancies to the dislocation having interstitial jogs may produce the recovery. (auth)

• Research Organization: Northwestern Univ., Evanston, IL (United States)
• Sponsoring Organization: Sponsor not identified
• NSA Number: NSA-17-041518
• OSTI ID: 4877388
• Report Number(s): CONF-49--3; AED-Conf--1963-012-2
• Country of Publication: United States
• Language: English

Related Subjects

ALUMINUM
ANNEALING
DEFECTS
DEFORMATION
DIFFUSION
DISLOCATIONS
ELECTRON BEAMS
IMPURITIES
INTERSTITIALS
LATTICES
LOW TEMPERATURE
MATERIALS TESTING
MEASURED VALUES
MECHANICAL PROPERTIES
METALS, CERAMICS, AND OTHER MATERIALS
MONOCRYSTALS
RADIATION DOSES
RADIATION EFFECTS
RECOVERY
STRESSES
TEMPERATURE
TEMPERING
TENSILE PROPERTIES
VACANCIES