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Spin 1 centers in neutron irradiated silicon

Conference ·
OSTI ID:4875217
Electron paramagnetic resonance was used to identify a number of fast-neutron induced defects formed in pile irradiated Si and to follow their concentrations as a function of annealing. Measurements were made at 300, 77, and 4.2 deg K on samples that had attained intrinsic resistivity during irradiation, using superheterodyne spectrometers operating at 24 kMc and 9.4 kMc. Aside from the Si-N center, the most prominent lines of the spectrum arise from the m/sub s/ = O to plus or minus 1 transitions of four spin 1 systems. The distinct symmetry and small production rate ( approximately 0.05 centers per fast neutron collision) indicate a class of well-defined but relatively rare defects. Their g tensors, zero-field splitting tensors, and hfs are compatible with systems having two weakly interacting (1 1 1) dangling bonds separated by about a lattice spacing, giving the S = 1 Hamiltonians in the triplet levels formed by the weak exchange interaction. Low-temperature measurements suggest that the singlet-triplet splitting lies between 3 and 50 cm-1. Comparison with floating zone Si shows Center (11, 111), which is dominant in unannealed samples, to be independent of impurity. The remaining three S = 1 centers, which grow and decay rapidly at higher temperatures, involve O. Precise measurements of the parameters of the spin Hamiltonians are given to permit reproducible identification of the centers. (auth)
Research Organization:
Purdue Univ., Lafayette, IN (United States)
NSA Number:
NSA-17-031038
OSTI ID:
4875217
Report Number(s):
CONF-23--7; AED-Conf--022-26
Country of Publication:
United States
Language:
English

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