Spin 1 centers in neutron irradiated silicon
Conference
·
OSTI ID:4875217
Electron paramagnetic resonance was used to identify a number of fast-neutron induced defects formed in pile irradiated Si and to follow their concentrations as a function of annealing. Measurements were made at 300, 77, and 4.2 deg K on samples that had attained intrinsic resistivity during irradiation, using superheterodyne spectrometers operating at 24 kMc and 9.4 kMc. Aside from the Si-N center, the most prominent lines of the spectrum arise from the m/sub s/ = O to plus or minus 1 transitions of four spin 1 systems. The distinct symmetry and small production rate ( approximately 0.05 centers per fast neutron collision) indicate a class of well-defined but relatively rare defects. Their g tensors, zero-field splitting tensors, and hfs are compatible with systems having two weakly interacting (1 1 1) dangling bonds separated by about a lattice spacing, giving the S = 1 Hamiltonians in the triplet levels formed by the weak exchange interaction. Low-temperature measurements suggest that the singlet-triplet splitting lies between 3 and 50 cm-1. Comparison with floating zone Si shows Center (11, 111), which is dominant in unannealed samples, to be independent of impurity. The remaining three S = 1 centers, which grow and decay rapidly at higher temperatures, involve O. Precise measurements of the parameters of the spin Hamiltonians are given to permit reproducible identification of the centers. (auth)
- Research Organization:
- Purdue Univ., Lafayette, IN (United States)
- NSA Number:
- NSA-17-031038
- OSTI ID:
- 4875217
- Report Number(s):
- CONF-23--7; AED-Conf--022-26
- Country of Publication:
- United States
- Language:
- English
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