Microstructure of Al{sub 2}O{sub 3} irradiated with an applied electric field
A thin amorphous film of alumina was irradiated with 2-MeV He{sup +} ions at {approximately}400 C up to a damage level of about 0.01 displacements per atom (dpa). The alumina films were sufficiently thin ({approximately}1.8 {mu}m) to allow the ion beam to be completely transmitted through the specimen. An electric field of {approximately}280 V/mm (dc) was applied continuously during the irradiation. Radiation induced electrical degradation (RIED), i.e. a permanent increase in the conductance of the film, was observed in specimens irradiated at temperatures near 400 to 450 C but did not occur in a specimen irradiated above 500 C. Transmission electron microscopy found no evidence for colloid formation. The observed increase in the conductance of the alumina film may be due to radiation-induced microcracking.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Oak Ridge Inst. for Science and Education, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 48739
- Report Number(s):
- CONF-941144-133; ON: DE95010278; TRN: 95:011863
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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