Anatase-to-rutile transition of titania thin films prepared by MOCVD
- Korea Advanced Inst. of Science and Technology, Taejon (Korea, Republic of). Dept. of Nuclear Engineering
- Seoul National Univ. (Korea, Republic of). Dept. of Inorganic Materials Engineering
- Korea Inst. of Science and Technology, Seoul (Korea, Republic of). Div. of Ceramics
Phase transitions of TiO{sub 2} thin films prepared by MOCVD were investigated using X-ray diffraction, scanning electron microscope, transmission electron microscope, and secondary ion mass spectroscope. It was found that the in-situ deposited thin films showed the onset of anatase-to-rutile transition at a much lower temperature of 400 C. In order to reveal the mechanism responsible for the low temperature transition, the transition of titanium iso-propoxide derived and titanium tetra-chloride derived powders were investigated. The onset temperatures of transition were 450 C and 700 C, respectively. It is therefore suggested that source effect is the main mechanism of low temperature transition. It is also suggested that the heterogeneous nucleation on the surface of substrate is responsible for the transition shown by in-situ deposited and post-annealed titania thin films being much faster than that shown by titanium powders.
- OSTI ID:
- 484866
- Journal Information:
- Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 4 Vol. 32; ISSN MRBUAC; ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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