OBTAINMENT OF THE NEGATIVE TEMPERATURE STATE IN THE p-n JUNCTIONS OF DEGENERATE SEMICONDUCTORS (in Russian)
As a result of the lowering of the potential barrier formed by the space charge, and application of a voltage in the forward direction to a p -- n junction the concentration of the minority carriers will increase. The studies show that at least a portion of the p -- n junction must be degenerate. Such semiconductors are basically tunnel diodes. The mechanism of the formation of the negative temperature state is due to the diffusion portion of the characteristic curve of the tunnel diode. In the p -- n junction of highly degenerate semiconductors the negative temperature state is reached before the potential barrier is competely removed; this makes it possible to use the diffusion theory of the current across the junction for quantitative measurements. Mathematical considerations indicate that the current density decreases with increasing degeneration level and with decreasing sample temperature, allowing it to reach the negative temperature state. However, the negative absorption coefficient prevailing at relatively high (about 10/sup 15/ cm/sup -3/) nonequilbrium concentration of minority carriers prevents operation at very low current densities. (TTT)
- Research Organization:
- Lebedev Inst. of Physics, Moscow
- NSA Number:
- NSA-16-000869
- OSTI ID:
- 4836332
- Journal Information:
- Zhur. Eksptl'. i Teoret. Fiz., Vol. Vol: 40; Other Information: Orig. Receipt Date: 31-DEC-62
- Country of Publication:
- Country unknown/Code not available
- Language:
- Russian
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