BERYLLIUM OXIDE SINGLE CRYSTAL GROWTH. II. WATER VAPOR TRANSPORT METHOD

Technical Report · Wed Nov 15 04:00:00 EST 1961

OSTI ID:4830617

Austerman, S B; Hopkins, A R

Beryllium oxide single crystals were grown by a method employing a reversible reaction between BeO and water vapor at high temperature. The reaction product, Be(OH)/sub 2/, was formed at temperatures between 1300 and 1650 deg C, then was allowed to decompose to BeO and H/sub 2/O at a temperature several hundred degrees lower. Sing1e crystals of simple and complex forms were formed. The principa1 interference with growth of large well-formed crystals was found to be impurities derived from the furnace, water, and the nutrient BeO placed in the furnace. Crystal growth mechanisms probably involved various types and orientations of dilocation structures, impurity poisoning of growth steps, spurious nucleation of new orientations by impurities, and diffusion-limited or - controlled nutrition of the growing crystals. By suitable control of purity of the crysta1 growth system, crysta1s of sizc 5 mm dia x 1 mm thickness as platelets or 2 cm x 2 mm diameter as rods were produced. (auth)

• Research Organization: Atomics International. Div. of North American Aviation, Inc., Canoga Park, Calif.
• DOE Contract Number: AT(11-1)-GEN-8
• NSA Number: NSA-16-001648
• OSTI ID: 4830617
• Report Number(s): NAA-SR-6420
• Country of Publication: United States
• Language: English

Related Subjects

BERYLLIUM HYDROXIDES
BERYLLIUM OXIDES
CHEMICAL REACTIONS
CHEMISTRY
DECOMPOSITION
DEFECTS
EXPANSION
FURNACES
HIGH TEMPERATURE
IMPURITIES
LATTICES
MONOCRYSTALS
NUCLEATION
POISONING
PRODUCTION
THICKNESS
TRANSPORT
VAPORS
WATER