Open Circuit Voltages in the Cesium Diode

Journal Article · Sun Oct 01 04:00:00 EDT 1961 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1728264· OSTI ID:4829475

Huffman, Fred N.

A plasma model and a close-spaced inodel are used to analyze the detailed variation of the open circuit voltage of the cesium diode. The plasma model open circuit voltage cxpression is compared to one derived by Lewis and Reitz in which the ion contribution to the net electron current is neglected. For either model the main features of the open circuit voltage at emitter temperatures less than 1800-K arise from the complex ion and electron emission properties as a function of emitter temperature and cesium pressure. Although at higher emitter temperatures the plasma model open circuit voltage becomes independent of the detailed surface characteristics of the emitter, the two models continue to give similar numerical results. Calculations based on these models and incorporating the data of Langmuir agree qualitatively with the sinusoidal and discontinuous open circuit voltage variations observed by Pidd, as welI as the anomalous load characteristic observed by Wilson. (auth)

• Research Organization: Martin Co., Nuclear Div., Baltimore, Md.
• Sponsoring Organization: USDOE
• NSA Number: NSA-16-002325
• OSTI ID: 4829475
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 32; ISSN JAPIAU; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CESIUM
CIRCUITS
CONFIGURATION
CURRENTS
DIODES
ELECTRIC POTENTIAL
ELECTRONS
EMISSION
IONS
NUMERICALS
PHYSICS
PLASMA
POWER
PRESSURE
SEMICONDUCTORS
SURFACES
TEMPERATURE
VARIATIONS