NEUTRON-INDUCED REACTIONS IN SILICON
Silicon surface-barrier detectors were exposed to fast neutrons from a thin TiD target bombarded by deuterons from a 5-Mev Van de Graaff generator. Charged particles produced in the depletion layer caused pulses having amplitudes that varied linearly with energy. One group was ascribed to Si/sup 29/(n, alpha ) reactions; the remainder, to (n,p) or (n, alpha ) transitions to known levels ln Al/sup 28/, Mg/sup 25/, or Mg /sup 26/. In tensities of all groups were proportional to the Si sensitivelayer volume; the effect was observed in diffused- junction Si detectors also. (L.N.N.)
- Research Organization:
- Atomic Energy Research Establishment, Harwell, Berks, Eng.
- NSA Number:
- NSA-16-026306
- OSTI ID:
- 4824093
- Journal Information:
- Phys. Letters, Journal Name: Phys. Letters Vol. Vol: 1
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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