The Influence of Defects Produced by High Energy Electrons on the Electrical Characteristics of p-n Junctions; INFLUENCE DES DEFAUTS CREES PAR DES ELECTRONS DE GRANDE ENERGIE SUR LES CARACTERISTIQUES ELECTRIQUES DES JONCTIONS P-N
Technical Report
·
OSTI ID:4821937
The life-time of minority carriers in semiconductors is very sensitive to the presence of defects introduced by high-energy electrons. The formation of defects thus affects the short-circuiting current and the open circuit voltage of a p-n junction, these being dependent on the lifetime. Several types of germanium and silicon junctions were bombarded with 2-Mev electrons from a Van de Graaf and with beta -particles from radioactive sources. The experiments were carried out both at ordinary temperatures and that of liquid air. In this latter case an anomaly in the electron-volt effect was found: the short-circuiting current and the voltage in vacuo, after an initial decrease, increased again and exceeded their initial maximum value before once more decreasing. A qualitative interpretation of this abnormal effect is given. (auth)
- Research Organization:
- France. Commissariat a l'Energie Atomique. Centre d'Etudes Nucleaires, Saclay
- NSA Number:
- NSA-16-005754
- OSTI ID:
- 4821937
- Report Number(s):
- CEA-1892
- Country of Publication:
- France
- Language:
- English
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