DE HAAS-VAN ALPHEN EFFECT IN InBi
The de Haas-van Alphen effect, or oscillatory dependence of magnetic susceptibility on magnetic field strength at low temperature, was applied in studies on the Fermi surfaces of semiconducting compounds. Observations are reported of de Haas-van Alphen oscillations in single crystals of InBi. The pertinent parameters for three periods are presented graphically. The effective mass for each period was determined from the temperature-dependence of the amplitude of the oscillations. It is apparent that the ranges of de Haas-van Alphen parameters in InBi are similar to those characteristics in pure polyvalent metals. (C.H.)
- Research Organization:
- Atomics International, Canoga Park, Calif.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-16-005815
- OSTI ID:
- 4821870
- Journal Information:
- Nature, Journal Name: Nature Vol. Vol: 192
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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OSTI ID:4654525