SYNTHESIS OF SEMICONDUCTOR MATERIALS BY RADIATION INDUCED REACTIONS. Final Report
Technical Report
·
OSTI ID:4819727
Activities in a program to prepare pure semiconductor materials by radiation-induced reactions are reported. The investigation is devoted primarily to silane. Included are data and a discussion concerning the preparation of silane and irradiation with Co/sup 60/ gammas under several conditions. Results indicate that there may be several steps in the decomposition of silane which follow a heterogeneous mechanism. The G value for decomposition of silane was determined at several temperatures. Other compounds which might be of interest, these including Si/sub 2/H/sub 6/, GeH/sub 4/, and Ge/sub 2/H/sub 6/, were noted. (J.R.D.)
- Research Organization:
- TRG, Inc., Syosset, N.Y.
- NSA Number:
- NSA-16-027034
- OSTI ID:
- 4819727
- Report Number(s):
- NYO-9864; TRG-132-FR
- Country of Publication:
- United States
- Language:
- English
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