SHALLOW ELECTRON TRAPS IN SINGLE CRYSTALS OF RUTILE STUDIED BY X-RAY IRRADIATION USING LOW FREQUENCY DIELECTRIC MEASUREMENTS
Defect structure in single crystals of rutile was studied by dielectric measurements at 2 cps and above, before and after irradiation with hard x rays. The results were analyzed by a Cole-Cole plot, which is a circle with its cenier shifted away from the dielectric constant axis. X irradiation shifts the center of the Cole-Cole plot toward the dielectric constant axis, indicating a decrease in distribution of relaxation times by evacuation of electrons from their shallow traps, which after release produce interfacial polarization. An attempt was also made to calculate the a-c behavior from d-c data, but the errors at frequencies of measurement were toe high, thus defying comparison with experimental data. (auth)
- Research Organization:
- Univ. of Allahabad, India
- NSA Number:
- NSA-16-019453
- OSTI ID:
- 4817685
- Journal Information:
- Physica, Vol. Vol: 28; Other Information: Orig. Receipt Date: 31-DEC-62
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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