INSTABILITY IN THE REVERSE I-V CHARACTERISTICS OF SILICON p--n JUNCTIONS INDUCED BY LOW-ENERGY ELECTRON IRRADIATION.
Journal Article
·
· J. Korean Phys. Soc. 1: 81-9(Oct. 1968).
OSTI ID:4811180
- Research Organization:
- Kyungpook National Univ., Taegu, Korea
- NSA Number:
- NSA-23-017891
- OSTI ID:
- 4811180
- Journal Information:
- J. Korean Phys. Soc. 1: 81-9(Oct. 1968)., Other Information: Orig. Receipt Date: 31-DEC-69
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N26500* -Instrumentation-Radiation Effects on Instruments & Instrument Components
EV RANGE
JUNCTIONS
KEV RANGE
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
STABILITY
SILICON JUNCTIONS/radiation effects on stability of p- n
low-energy electron
ELECTRONS/effects on silicon p-n junction stability at low energies
EV RANGE
JUNCTIONS
KEV RANGE
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
STABILITY
SILICON JUNCTIONS/radiation effects on stability of p- n
low-energy electron
ELECTRONS/effects on silicon p-n junction stability at low energies