RADIATION DAMAGE OF SEMICONDUCTORS BY PROTONS
Technical Report
·
OSTI ID:4807009
Ge and Si pnp and npn transistors and InAs and InSb Hall plates are exposed to proton irradiations at 550 to 600 Mev. The Hall plates are also exposed to 4-Mev protons. The transistor current amplification is affected at exposures of about 10/sup 12/ protons/cm/sup 2/, and decreases to about 10% of its original value at 10/sup 13/ protons/cm/. At 10/sup 15/ protons/cm/sup 2/ at 4 Mev, the minority carrier concentrations and mobilities in the Hall plates begin to be affected. Mobility losses as great as 90% are observed. (T.F.H.)
- Research Organization:
- European Organization for Nuclear Research, Geneva
- NSA Number:
- NSA-16-012175
- OSTI ID:
- 4807009
- Report Number(s):
- CERN-62-5
- Country of Publication:
- Switzerland
- Language:
- English
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