INTERBAND ELECTRON-ELECTRON SCATTERING AND TRANSPORT PHENOMENA IN SEMICONDUCTORS
The effect of interband electron-electron scattering (electron-hole scattering, light hole-heawy hole scattering, etc,) on the electrical transport phenomena is studied using a variational method obtained by a generalization of Kohler's variation principle to a multiband conductor. It is assumed that the electronic structure is given by parabolic conduction and valence bands, separated from each other by DELTA E >> k/sub B/T; the valence band may be twofold degenerate; the average occupation numbers of electronic eigenstates are given by Permi-Dirac statistics; the dynamical interaction between charge carriers is described by a shielded Coulomb potential. Assuming nondegenerate semiconductors, acoustical and optical phonon scattering and ion scattering are considered, besides electronelectron scattering. Quantitative results are obtained for the electrical conductivity, the heat conductivity, and the Seebeck coefficient, including the ambipolar effect. The results can easily be applied to cases of physical interest; hole-hole scattering and mobility of p germanium, intercarrier scattering and mobility of intrinsic germanium, transient conductivity of charge carriers in germanium produced by short pulses of high- energy electrons, intercarrier scaitering and its influence on the heat conductivity, and the Wiedemann-Franz ratio of intrinsic semiconductors are considered. (auth)
- Research Organization:
- General Atomic Div., General Dynamics Corp., San Diego, Calif.
- NSA Number:
- NSA-16-015322
- OSTI ID:
- 4793313
- Journal Information:
- Physical Review (U.S.) Superseded in part by Phys. Rev. A, Phys. Rev. B: Solid State, Phys. Rev. C, and Phys. Rev. D, Vol. Vol: 125; Other Information: Orig. Receipt Date: 31-DEC-62
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
Thermal transport in compensated semimetals: Effect of electron-electron scattering on Lorenz ratio
Beyond modulation doping: Engineering a semiconductor to be ambipolar, or making an ON-OFF-ON transistor
Related Subjects
CHARGED PARTICLES
DEFECTS
EIGENSTATES
ELECTRIC CHARGES
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRONS
ENERGY
ENERGY LEVELS
FERMIONS
FREQUENCY
GERMANIUM
IONS
LIGHT
MATHEMATICS
MOTION
OSCILLATIONS
PHONONS
PULSES
SCATTERING
SEEBECK EFFECT
SEMICONDUCTORS
SOUND
STATISTICS
TEMPERATURE
THERMAL CONDUCTIVITY
THERMOELECTRICITY
TRANSIENTS
TRANSPORT
TRANSPORT THEORY
VALENCE
WIEDEMANN-FRANZ LAW