Observation of crystallization, precipitation, and phase transformation phenomena in Si rich titanium silicide thin films
- IBM Microelectronics, Hopewell Junction, NY (United States)
- IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
Crystallization, precipitation, and phase transformation phenomena were observed in titanium silicide thin film samples during in situ heating experiments in a transmission electron microscope. The as-deposited Ti{sub x}Si{sub y} films were 110 nm in thickness with a composition of 1 Ti to 2.33 Si. Crystallization of the C49 phase was followed isothermally near the sputter deposition temperature. The movement of individual grain boundaries was recorded so that a velocity of crystallization could be calculated. The precipitation of excess silicon from the C49 phase was first observed in the 650 C to 750 C temperature range. The precipitates were predominantly of the incoherent type, with a smaller number existing at the grain boundaries. Ostwald ripening then occurred up to the C49 to C54 phase transformation which was accompanied by a dramatic increase in grain size. Grain boundary movement during the phase transformation was such that large precipitates, which were originally at C49-C49 boundaries, ended up within resulting C54 crystals. Many of these larger precipitates were found to exist as epitaxial islands at the TiSi{sub 2}/Si substrate interface.
- OSTI ID:
- 479303
- Report Number(s):
- CONF-951155--; ISBN 1-55899-301-0
- Country of Publication:
- United States
- Language:
- English
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