Test of kinetic models for interface velocity, temperature, and solute trapping in rapid solidification

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:479257

Kittl, J A ^[1]; Aziz, M J ^[2]; Brunco, D P ^[3]; Thompson, M O ^[4]

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1. Texas Instruments Inc., Dallas, TX (United States). Semiconductor Process and Device Center
2. Harvard Univ., Cambridge, MA (United States). Div. of Applied Sciences
3. Intel Corp., Santa Clara, CA (United States)
4. Cornell Univ., Ithaca, NY (United States)

During rapid solidification, deviations from local interfacial equilibrium are manifested by solute trapping and interfacial undercooling. Both the solute trapping function and the interface velocity-temperature function have been measured in the Si:As alloy system following pulsed laser melting, permitting them to test models for nonequilibrium interface kinetics. The results are consistent with the Continuous Growth Model without solute drag of Aziz and Kaplan and are inconsistent with models that incorporate solute drag effects during solidification.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 479257
• Report Number(s): CONF-951155--; ISBN 1-55899-301-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC ALLOYS
EXPERIMENTAL DATA
INTERFACES
KINETICS
LASER RADIATION
LIQUID METALS
MATHEMATICAL MODELS
SILICON ALLOYS
SOLIDIFICATION
VALIDATION