The crystal-melt interface in Si or Ge
Book
·
OSTI ID:479244
- Harvard Univ., Cambridge, MA (United States). Div. of Applied Sciences
From the nucleation data on undercooling of liquid Si or Ge, crystal-melt interfacial tensions are calculated. Only a temperature-dependent tension can account simultaneously for the results of experiments on bulk and thin film Si. The observed temperature dependence can be accounted for by reasonable values of the interfacial entropy and enthalpy. The analysis is used to determine the temperature-dependent interfacial tension for Ge. A comparison of results for Ge and Si indicates that homogeneous nucleation has not been achieved in the undercooling of bulk liquid Si.
- Sponsoring Organization:
- National Aeronautics and Space Administration, Washington, DC (United States)
- OSTI ID:
- 479244
- Report Number(s):
- CONF-951155--; ISBN 1-55899-301-0
- Country of Publication:
- United States
- Language:
- English
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