Energy positions of oxide semiconductors and photocatalysis with iron complex oxides
- Kumamoto Univ. (Japan)
Energy position, bandgap, band structure, and their relationships were reviewed for various oxide semiconductors, especially iron oxides, in photoelectrochemistry and photocatalysis, and the photocatalytic reduction of CO{sub 2} on some iron complex oxides was demonstrated. A linear relationship between bandgap and band edge was obtained for almost all the semiconductor oxides. It was pointed out that a bandgap energy higher than about 2.46 eV is necessary for water photolysis without bias voltage. It was found that the energy positions of the band edge can be controlled by the electronegativity of the metal elements constituting the iron complex oxides. The relationship between the band structure and the charge transfer site was also examined. The photocatalytic reduction of CO{sub 2} to CH{sub 2}OH was demonstrated for CaFe{sub 2}O{sub 4} and Fe-Bi-Sr-Pb-O complex oxides. The photocatalytic activity of the latter oxide with a layer structure increased with increased Pb content. The catalytic mechanism was discussed from the point of view of the redox mechanism as well as the energy position of the band edge.
- OSTI ID:
- 478809
- Journal Information:
- Journal of Solid State Chemistry, Vol. 126, Issue 2; Other Information: PBD: 1 Nov 1996
- Country of Publication:
- United States
- Language:
- English
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