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U.S. Department of Energy
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THERMAL PROPERTIES OF REFRACTORY MATERIALS

Technical Report ·
OSTI ID:4781760
>Refinements in the transient thermal property apparatus are described. With these modifications, the apparatus was used to determine the thermal diffusivity of WB from about 1300 to 1600 deg C. The measured values increase from about 0.054 to 0.058 over this temperature interval. The techniques and apparatus for measuring the specific heat of brittle conductors by pulse heating are also described. Resistivity and specific heat data for uranium silicide of several compositions are reported. The resistivity and specific heat increased with increasing silicon content. For uranium silicide containing 3.8% silicon, the resistivity increased from 56 micro-ohm-cm at 0 deg C to 75 micro-ohm-cm at 750 deg C and for uranium silicide containing 5.9% silicon, the resistivity increased from 81 microohm-cm at 0 deg C to 111 micro-ohm-cm at 800 deg C. The specific heat for the 3.8% silicon material is given by c/sub p/ = 3.16 x 10/sup - 6/ T + 0.0412 cal/gm- deg C from 50 to 430 deg C, and for the 5.8% silicon material, c/sub p/ = 16.1 x 10/sup -6/ T + 0.0455 cal/ gm- deg C from 50 to 715 deg C, where T is in deg C. The thermal conductivity of TiC was measured at 400 to 1200 deg C. The steady-state radial heat flow method was used. The conductivity varies linearly from 0.088 cal/sec-cm- deg C at 500 deg C to 0.109 cal/sec-cm- deg C at 1100 deg C. These results are in marked contrast to values reported in the literature. (auth)
Research Organization:
Atomics International. Div. of North American Aviation, Inc., Canoga Park, Calif.
NSA Number:
NSA-16-016733
OSTI ID:
4781760
Report Number(s):
WADD-TR-60-581(Pt.II); AD-2642
Country of Publication:
United States
Language:
English