Ion implantation damage and B diffusion in low energy B implantation with Ge preimplantation
Book
·
OSTI ID:477438
- Fujitsu Ltd., Kawasaki (Japan)
For low energy B (LEB) implantation into Si, the channeling tail is larger than for BF{sub 2}{sup +} implantation, so Ge{sup +} preamorphization is expected to provide a shallower junction. The authors studied the Ge{sup +} and B{sup +} implantation damages and the damage-induced B diffusion. The substrate implanted Ge{sup +} with 2 {times} 10{sup 14} cm{sup {minus}2}, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity ({rho}{sub s}) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. They expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.
- OSTI ID:
- 477438
- Report Number(s):
- CONF-951155--; ISBN 1-55899-299-5
- Country of Publication:
- United States
- Language:
- English
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