On the influence of illumination during ion damage defect anneal of silicon
Book
·
OSTI ID:477436
- Pennsylvania State Univ., University Park, PA (United States). Dept. of Engineering Science
An exploratory deep level transient spectroscopy (DLTS) study on the possible role of illumination during thermal annealing has been carried out on Si with extended defects generated by Ar implantation and electron cyclotron resonance (ECR) hydrogen plasma. Experiments with the rapid thermal anneal (RTA) using quartz-halogen lamps show only a minor role for illumination on anneal of defects generated by Ar ion damage as well as thermal generation of defects under post-hydrogenation anneal. However, significant differences are evident relative to conventional furnace anneal and it appears likely that recombination-assisted defect reactions may be quite significant in Si processing when high intensity sources such as arc lamps are adapted in RTA systems.
- OSTI ID:
- 477436
- Report Number(s):
- CONF-951155--; ISBN 1-55899-299-5
- Country of Publication:
- United States
- Language:
- English
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