Diamond turning of Si and Ge single crystals
Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.
- Research Organization:
- Los Alamos National Lab., NM (United States); North Carolina State Univ., Raleigh, NC (United States)
- OSTI ID:
- 476637
- Report Number(s):
- LA-SUB--93-81; ON: DE97003578
- Country of Publication:
- United States
- Language:
- English
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