EFFECT OF FORWARD-VOLTAGE ION-DRAFT ON THE OPERATION OF LITHIUM-DRIFTED SILICON JUNCTION DETECTORS

Journal Article · Sat Sep 01 04:00:00 EDT 1962 · Nucl. Instr. Methods

DOI:https://doi.org/10.1016/0029-554X(62)90172-6· OSTI ID:4756594

Mann, H M; Janarek, F J

The lithium-drifted junction in p-type silicon exhibits first an increase in depletion-layer thickness and then a loss of rectification as ion- drift is continued. The loss of rectification appears as an increase in reverse current, and a reduction in forward current, when lithium-donor atoms accumulate near a metal contact on the p-type surface. Larger reverse currents reduce the electric field that can be maintained within the device and impair charge collection. This deterioration of diode and detector properties is turned back by drifting lithium ions with forward voltage applied to the detector. Six detectors have been so treated and each exhibits the same behavior. Their response to internal conversion electrons from Pb/sup 207m/ and to 6 to 9 Mev alpha particles shows retraction of the sensitive region from the p-type surface as a result of treatment. Deterioration of such detectors during use can therefore be corrected by intermittent reversal of some portion of the applied voltage. (auth)

• Research Organization: Argonne National Lab., Ill.
• NSA Number: NSA-17-004832
• OSTI ID: 4756594
• Report Number(s): TID-15894
• Journal Information: Nucl. Instr. Methods, Journal Name: Nucl. Instr. Methods Vol. Vol: 17
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ALPHA PARTICLES
CERMETS
CURRENTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRONS
GRAPHITE
INSTRUMENTS AND INSTRUMENTATION
INTERNAL CONVERSION
ISOMERS
LAYERS
LEAD 207
LITHIUM
RADIATION DETECTORS
RESINS
SEMICONDUCTORS
SILICON
SURFACES
THERMAL CONDUCTIVITY