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Neutron Irradiation of Zener Diodes

Journal Article · · Journal of the Physical Society of Japan
DOI:https://doi.org/10.1143/JPSJ.17.1203· OSTI ID:4753759
The effect of neutron irradiation on the breakdown of silicon p-n junction was investigated and are reported. The p-n junctions were that of Zener diodes and were bombarded with 14-Mev neutrons from a Cockcroft-Walton accelerator. Measurements were made at 20 deg C. A typical Zener diode characteristic curve before and immediately after neutron bombardment (10/sup 10/ nvt) is shown. (W.D.M.)
Research Organization:
Saha Inst. of Nuclear Physics, Calcutta
Sponsoring Organization:
USDOE
NSA Number:
NSA-17-003553
OSTI ID:
4753759
Journal Information:
Journal of the Physical Society of Japan, Journal Name: Journal of the Physical Society of Japan Journal Issue: 7 Vol. 17; ISSN 0031-9015
Country of Publication:
Country unknown/Code not available
Language:
English

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