Use of di-{pi}-cyclopentadienyl manganese as a dopant source for ZnS in metallorganic chemical vapor deposition
- National Cheng Kung Univ., Tainan (Taiwan, Province of China). Dept. of Electrical Engineering
The authors report the successful use of di-{pi}-cyclopentadienyl manganese [(C{sub 5}H{sub 5}){sub 2}Mn] as a manganese dopant for ZnS films, fabricated by low-pressure metallorganic chemical vapor deposition onto an indium-tin oxide coated glass substrate. The substrate temperature was 225 C. The concentration of manganese in the films was studied as a function of a (C{sub 5}H{sub 5}){sub 2}Mn bubbler temperature. The crystallinity and morphology of the films were examined by X-ray diffraction and atomic force microscopy. The grain size was 43 nm, as evaluated by the Debye-Scherrer relation. ZnS:Mn ac thin film electroluminescent devices with a double insulating layer structure were prepared. The luminance exceeded 1,500 cd/m{sup 2}, which is higher than the previously reported value of 680 cd/m{sup 2}, employing the same Mn source.
- Sponsoring Organization:
- National Science Council, Taipei (Taiwan, Province of China)
- OSTI ID:
- 474637
- Journal Information:
- Journal of the Electrochemical Society, Vol. 143, Issue 12; Other Information: PBD: Dec 1996
- Country of Publication:
- United States
- Language:
- English
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