Non-dissipative Undeland snubber for electric vehicle drive inverters using GaAs anti-parallel diodes
- Univ. of Minnesota, Minneapolis, MN (United States). Dept. of Electrical Engineering
- Norwegian Technical Inst., Trondheim (Norway). Dept. of Electrical Engineering
Many techniques have been developed over the years for reducing the switching stresses and losses in transistors of DC-AC Inverters. Soft-switching techniques such as Resonant-Pole Inverters, Resonant DC-Link Inverters and Quasi-Resonant DC Link Inverters suffer from substantially increased voltage or current ratings of the devices, additional controlled switches and increased complexity of control. Conventional snubbers are simple to use, but the dissipation in the snubber results in no overall improvement in the efficiency of the inverter. The Undeland snubber with a simple energy recovery circuit combines both the simplicity of the conventional snubber while reducing the switching stresses in the switches and improving the overall efficiency of the power circuit. Experiments are conducted on a single-phase 1 kVA Mosfet inverter with GaAs anti-parallel diodes and operating from a DC bus of 135 V. The results are presented for operations in the hard-switched mode as well as with the regenerative Undeland snubber in operation. It is shown that the Undeland snubber improves efficiency as compared to the hard-switched mode of operation. Practical limitations and design considerations of the Undeland snubber in the presence of improved devices such as low-reverse recovery current diodes like GaAs diodes are also shown.
- OSTI ID:
- 474551
- Report Number(s):
- CONF-9601119-; ISBN 0-7803-2795-0; TRN: IM9723%%444
- Resource Relation:
- Conference: IEEE international conference on power electronics, drives and energy systems for industrial growth (PEDES 96). Vols I & II, New Delhi (India), 8-11 Jan 1996; Other Information: PBD: 1995; Related Information: Is Part Of 1996 international conference on power electronics, drives and energy systems for industrial growth: Proceedings. Volume 2; Murthy, S.S.; Roy, S. [eds.] [Indian Inst. of Tech., New Delhi (India)]; Divan, D. [ed.] [Univ. of Wisconsin, Madison, WI (United States)]; Doradla, S.R. [ed.] [Indian Inst. of Tech., Kanpur (India)]; Murthy, B.V. [ed.] [General Motors, Detroit, MI (United States)]; PB: 472 p.
- Country of Publication:
- United States
- Language:
- English
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