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The Degradation of Solar Cells under Van Allen Radiation

Journal Article · · IEEE Transactions on Nuclear Science

The electrons and protons of the Van Allen belt cause radiation damage to silicon solar cells that results in a gradual reduction of the power output of solar power plants on satellites passing through the belt. The study of the radiation damage caused by monoenergetic electrons and by monoenergetic protons of various energy indicates that n-on-p solar cells are substantially more radiationresistant than p-on-n cells. From such studies and a knowledge of the composition of the Van Allen belt, a flow of (for example) 1-Mev electrons can be determined that will cause the same radiation damage per unit time to a bare solar cell as the Van Allen belt spectrum would produce under a given shielding. Observations of radiation damage of satellites are also conveniently expressed in terms of such an equivalent flux. Measurements of solarceil short-circuit current changes and changes in the current gain of specially designed highly radiation-sensitive trsnsistors are performed on the Telstar satellite. The results agree with the radiation damage expected from the observed particle flux, and indicate that solar power is practical for long-life satellites passing through the Van Allen belt, particularly if n-on-p solar cells are used. (auth)

Research Organization:
Sandia Corp., Albuquerque, N. Mex.
Sponsoring Organization:
USDOE
NSA Number:
NSA-17-016884
OSTI ID:
4744295
Report Number(s):
TID-17079; SCDC-2829
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 10; ISSN 0018-9499
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Country of Publication:
United States
Language:
English

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