The {alpha}-{beta} transformation in silicon nitride single crystals

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/j.1151-2916.1997.tb02876.x· OSTI ID:474142

Suematsu, Hisayuki; Mitomo, Mamoru ^[1]; Mitchell, T E; Petrovic, J J ^[2]; Fukunaga, Osamu; Ohashi, Naoki ^[3]

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1. National Inst. for Research in Inorganic Materials, Ibaraki (Japan)
2. Los Alamos National Lab., NM (United States). Center for Materials Science
3. Tokyo Inst. of Tech. (Japan). Dept. of Engineering

Single crystals of {alpha}-Si{sub 3}N{sub 4} were annealed at 2,000--2,150 C. The {beta} phase was detected after annealing at 2,150 C only when the crystals were surrounded by MgO{center_dot}3Al{sub 2}O{sub 3} or Y{sub 2}O{sub 3} powders. On the other hand, no evidence of the {alpha}-{beta} transformation was found when the crystals were annealed without additives. The solution-precipitation mechanism was concluded to be the dominant factor in the {alpha}-{beta} transformation of Si{sub 3}N{sub 4}.

• Sponsoring Organization: USDOE, Washington, DC (United States)
• OSTI ID: 474142
• Journal Information: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Journal Issue: 3 Vol. 80; ISSN 0002-7820; ISSN JACTAW
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
EXPERIMENTAL DATA
MONOCRYSTALS
NITROGEN
PHASE TRANSFORMATIONS
SILICON NITRIDES
TEMPERATURE RANGE 1000-4000 K