CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS. PART II. CONCENTRATION DISTRIBUTION IN ION-IMPLANTED CONTACTS FOR SEMICONDUCTOR DETECTORS.
Technical Report
·
OSTI ID:4721697
- Research Organization:
- Kernforschungszentrum, Karlsruhe (West Germany). Institut fuer Angewandte Kernphysik
- NSA Number:
- NSA-24-005884
- OSTI ID:
- 4721697
- Report Number(s):
- EUR-4269
- Resource Relation:
- Other Information: UNCL. Orig. Receipt Date: 31-DEC-70
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS. II. CONCENTRATION DISTRIBUTION IN ION-IMPLANTED CONTACTS FOR SEMICONDUCTOR DETECTORS.
CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS. PART I. WINDOW THICKNESS OF ION-IMPLANTED SEMICONDUCTOR DETECTORS.
CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS. I. WINDOW THICKNESS OF ION-IMPLANTED SEMICONDUCTOR DETECTORS.
Journal Article
·
Wed Jan 01 00:00:00 EST 1969
· Nucl. Instrum. Methods, 70: 285-90(May 1, 1969).
·
OSTI ID:4721697
CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS. PART I. WINDOW THICKNESS OF ION-IMPLANTED SEMICONDUCTOR DETECTORS.
Technical Report
·
Sat Oct 31 00:00:00 EST 1970
·
OSTI ID:4721697
CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS. I. WINDOW THICKNESS OF ION-IMPLANTED SEMICONDUCTOR DETECTORS.
Journal Article
·
Wed Jan 01 00:00:00 EST 1969
· Nucl. Instrum. Methods, 70: 279-84(May 1, 1969).
·
OSTI ID:4721697
Related Subjects
N26110* -Instrumentation-Radiation Detection Instruments- General Detectors & Monitors
BEAMS
BOMBARDMENT
CARRIERS
DENSITY
DISTRIBUTION
IMPURITIES
ION BEAMS
ION IMPLANTATION
JUNCTIONS
MEASUREMENT
SEMICONDUCTOR COUNTERS
SEMICONDUCTORS
SOLID-STATE COUNTERS
RADIATION DETECTORS
SEMICONDUCTOR/contacts in
analysis of depth concentration of electrically active centers in ion-implanted
BEAMS
BOMBARDMENT
CARRIERS
DENSITY
DISTRIBUTION
IMPURITIES
ION BEAMS
ION IMPLANTATION
JUNCTIONS
MEASUREMENT
SEMICONDUCTOR COUNTERS
SEMICONDUCTORS
SOLID-STATE COUNTERS
RADIATION DETECTORS
SEMICONDUCTOR/contacts in
analysis of depth concentration of electrically active centers in ion-implanted