skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: SPACE-CHARGE-LIMITED CURRENT IN NEUTRON-IRRADIATED SILICON, WITH EVIDENCE OF THE COMPLETE LAMPERT TRIANGLE.

Journal Article · · Phys. Rev. 186: 811-15(15 Oct 1969).
;

Research Organization:
Southern Methodist Univ., Dallas
Sponsoring Organization:
USDOE
NSA Number:
NSA-24-008529
OSTI ID:
4714802
Journal Information:
Phys. Rev. 186: 811-15(15 Oct 1969)., Other Information: Orig. Receipt Date: 31-DEC-70
Country of Publication:
Country unknown/Code not available
Language:
English

Similar Records

OBSERVATION OF DEFECT ANNEALING IN NEUTRON-IRRADIATED SILICON BY SPACE- CHARGE-LIMITED CURRENT.
Journal Article · Sat Jan 01 00:00:00 EST 1972 · Phys. Rev., B 5: No. 8, 3364-6(15 Apr 1972). · OSTI ID:4714802
ELECTRON TRAPPING IN NEUTRON-IRRADIATED SILICON STUDIED BY SPACE-CHARGE- LIMITED CURRENT.
Journal Article · Sat Jan 01 00:00:00 EST 1972 · J. Appl. Phys. 43: No. 6, 2755-62(Jun 1972). · OSTI ID:4714802
EFFECT OF 14 MeV NEUTRONS ON SPACE--CHARGE-LIMITED CURRENT OF ELECTRONS IN HIGH PURITY SILICON.
Journal Article · Wed Jan 01 00:00:00 EST 1969 · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-16: No. 6, 69-80(Dec 1969). · OSTI ID:4714802

Related Subjects

N33110* -Physics (Solid State)-Radiation Effects
CARRIERS
CURRENTS
DEFECTS
ELECTRIC POTENTIAL
FAST NEUTRONS
OXYGEN
RADIATION EFFECTS
SILICON
TRAPS
VACANCIES
SILICON/radiation effects on electric properties of
determination of bounding sides of Lampert triangle of single-carrier conduction for fast-neutron
NEUTRONS
FAST/effects on electric properties of silicon