Silicon carbide: The premier paradigm for structural and microelectronic device applications in severe environments
- North Carolina State Univ. Raleigh, NC (United States)
The extreme thermal, mechanical, corrosion resistant and electronic properties of SiC provide multiplicative combinations of attributes which allow a variety of products for very different applications. The emphasis herein will be the consideration of both the constant stress creep properties of several types of polycrystalline SiC materials and the characteristics of different SiC-based devices having high power, high frequency and switching applications and which are operational at {ge} 573 K. The controlling mechanism in reaction-bonded SiC within the ranges of temperature and stress of 1,848 K--1,923 K and 110--220 MPa, respectively, is glide/climb controlled by climb. The controlling creep mechanism in CVD material at T < 1,873 K is dislocation glide controlled by the Peierls stress; above this temperature, the evidence suggests that dislocation glide/climb controlled by climb becomes an increasingly important mechanism. For sintered {alpha}-SiC within the respective temperature and stress ranges of 1,670 K--2,073 K and 138--414 MPa, the controlling creep mechanism are grain boundary sliding accommodated by grain boundary diffusion at T < 1,800 K and lattice diffusion at T > 1,920 K. By contrast, the continual development of SiC thin film deposition and the device related technologies of doping, contacts and dry etching have culminated in a host of microelectronic devices operable at high temperatures, namely, MOSFET high power devices, MESFET high frequency devices, and switches including p-n junctions and thyristors. The properties of selected devices and circuits made from them are described with an emphasis on their operation at high temperature. 52 refs., 7 figs.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 470931
- Report Number(s):
- CONF-951155-; ISBN 1-55899-313-4; TRN: IM9722%%54
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Covalent ceramics III -- Science and technology of non-oxides; Hepp, A.F. [ed.] [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center]; Kumta, P.N. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Sullivan, J.J. [ed.] [MKS Instruments, Andover, MA (United States)]; Fischman, G.S. [ed.] [Food and Drug Administration, Rockville, MD (United States)]; Kaloyeros, A.E. [ed.] [Univ. of Albany, NY (United States)]; PB: 499 p.; Materials Research Society symposium proceedings, Volume 410
- Country of Publication:
- United States
- Language:
- English
Similar Records
Kinetics and mechanisms of high-temperature creep in silicon carbide: II, chemically vapor deposited
Elevated temperature mechanical properties of compositionally varied Si/SiC composites