Atmospheric pressure chemical vapor deposition of titanium nitride from titanium bromide and ammonia

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:470919

Gordon, R G; Frisbie, R W; Musher, J; Thornton, J ^[1]

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1. Harvard Univ., Cambridge, MA (United States). Dept. of Chemistry

Titanium nitride films were formed by chemical vapor deposition from titanium tetrabromide and ammonia at atmospheric pressure and substrate temperatures from about 400 to 600 C. Although titanium tetrabromide is a highly hygroscopic solid at room temperature, it can be handled conveniently as a very concentrated liquid solution (85 weight percent) in bromine as a solvent. This solution can be vaporized by a direct liquid injection system. Alternatively, the solution can be pumped into a bubbler, from which the bromine solvent is then removed by fractional distillation. Rutherford Backscattering Spectroscopy was used to determine that the bromine content of TiN deposited at 500 C was about one atomic percent. Growth rates were about 17 nm/min, and electrical resistivity was found to be about 200 {micro}{Omega}-cm.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 470919
• Report Number(s): CONF-951155--; ISBN 1-55899-313-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
BROMINE
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
EVAPORATION
SOLUTIONS
THIN FILMS
TITANIUM BROMIDES
TITANIUM NITRIDES