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Title: Qualitative and quantitative analysis of stacking disorder in {alpha}- and {beta}-SiC by X-ray diffraction and structure modeling

Book ·
OSTI ID:470912
; ;  [1]
  1. Polish Academy of Sciences, Warsaw (Poland). High Pressure Research Center

A method of analysis of disordering in {alpha}- and {beta}-SiC polycrystals by numerical modeling, and a simulation of X-ray diffraction profiles are presented. This diffraction patterns of non-periodic structures were simulated for models of 2,000 layer fragments of the structure. Computer generation of the models was based on the Poisson function describing the size distribution of the domains of basic polytypes and faults. The models were quantified by a set of input probability parameters describing relative frequencies of the occurrence of the domains of polytypes and faults. Implementation of a correlation parameter that characterizes coherence of sequential domains of a given polytype assures a good reproducibility of the simulated diffraction profiles obtained for the same set of the model parameters. Based on this method, a quantitative analysis of disordering in polycrystals of SiC annealed in the temperature range 1,100--2,200 C was performed.

OSTI ID:
470912
Report Number(s):
CONF-951155-; ISBN 1-55899-313-4; TRN: IM9722%%34
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Covalent ceramics III -- Science and technology of non-oxides; Hepp, A.F. [ed.] [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center]; Kumta, P.N. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Sullivan, J.J. [ed.] [MKS Instruments, Andover, MA (United States)]; Fischman, G.S. [ed.] [Food and Drug Administration, Rockville, MD (United States)]; Kaloyeros, A.E. [ed.] [Univ. of Albany, NY (United States)]; PB: 499 p.; Materials Research Society symposium proceedings, Volume 410
Country of Publication:
United States
Language:
English

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