Electron holography of P-N junctions
- Oak Ridge National Lab., TN (United States)
A wide holographic field of view (up to 15 {mu}m in the Hitachi-HF2000) is achieved in a TEM by switching off the objective lens and imaging the sample by the first intermediate lens. Fig. 1 shows the corresponding ray diagram for low magnification image plane off-axis holography. A coherent electron beam modulated by the sample in its amplitude and its phase is superimposed on a plane reference wave by a negatively biased Moellenstedt-type biprism. Our holograms are acquired utilizing a Hitachi HF-2000 field emission electron microscope at 200 kV. Essential for holography are a field emission gun and an electron biprism. At low magnification, the excitation of each lens must be appropriately adjusted by the free lens control mode of the microscope. The holograms are acquired by a 1024 by 1024 slow-scan CCD-camera and processed by the {open_quotes}Holoworks{close_quotes} software. The hologram fringes indicate positively and negatively charged areas in a sample by the direction of the fringe bending. Thus we directly recognize p and n regions of a semiconductor by the fringe bending of the interference fringes.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 468948
- Report Number(s):
- CONF-960877-; TRN: 97:001308-0206
- Resource Relation:
- Conference: Microscopy and microanalysis 1996, Minneapolis, MN (United States), 11-15 Aug 1996; Other Information: PBD: 1996; Related Information: Is Part Of Microscopy and microanalysis 1996; Bailey, G.W.; Corbett, J.M.; Dimlich, R.V.W.; Michael, J.R.; Zaluzec, N.J. [eds.]; PB: 1107 p.
- Country of Publication:
- United States
- Language:
- English
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