Anomalous normal mode oscillations in semiconductor microcavities

Technical Report · Tue Apr 01 04:00:00 EST 1997

DOI:https://doi.org/10.2172/468579· OSTI ID:468579

Wang, H ^[1]; Hou, H Q; Hammons, B E ^[2]

---

1. Univ. of Oregon, Eugene, OR (United States). Dept. of Physics
2. Sandia National Labs., Albuquerque, NM (United States)

Semiconductor microcavities as a composite exciton-cavity system can be characterized by two normal modes. Under an impulsive excitation by a short laser pulse, optical polarizations associated with the two normal modes have a {pi} phase difference. The total induced optical polarization is then expected to exhibit a sin{sup 2}({Omega}t)-like oscillation where 2{Omega} is the normal mode splitting, reflecting a coherent energy exchange between the exciton and cavity. In this paper the authors present experimental studies of normal mode oscillations using three-pulse transient four wave mixing (FWM). The result reveals surprisingly that when the cavity is tuned far below the exciton resonance, normal mode oscillation in the polarization is cos{sup 2}({Omega}t)-like, in contrast to what is expected form the simple normal mode model. This anomalous normal mode oscillation reflects the important role of virtual excitation of electronic states in semiconductor microcavities.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 468579
• Report Number(s): SAND--97-0763C; CONF-970510--4; ON: DE97004536
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
EXCITATION
EXPERIMENTAL DATA
FREQUENCY MIXING
GALLIUM ARSENIDES
LASER CAVITIES
LASER RADIATION
OSCILLATION MODES
SEMICONDUCTOR LASERS