EFFECTS OF IMPURITIES ON GAMMA-IRRADIATED SILICON CRYSTAL EXAMINED BY PHOTOVOLTAIC EFFECT OF P--N JUNCTION DIODE.
Journal Article
·
· Jap. J. Appl. Phys. 11: No. 7, 1016-23(Jul 1972).
- Research Organization:
- Nippon Telegraph and Telephone Public Corp., Tokai, Japan
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-26-045671
- OSTI ID:
- 4684384
- Journal Information:
- Jap. J. Appl. Phys. 11: No. 7, 1016-23(Jul 1972)., Other Information: Orig. Receipt Date: 31-DEC-72
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N46300* -Instrumentation-Radiation Effects on Instrument Components
Instruments
or Electronic Systems
GAMMA RADIATION
IMPURITIES- SILICON
RADIATION EFFECTS ANNEALING- CARRIER LIFETIME- SILICON DIODES
GAMMA RADIATION/effects on carrier lifetime and isochronal annealing of silicon p-n diodes
SILICON/impurity effects on gamma- irradiated crystals of
SEMICONDUCTOR JUNCTIONS/radiation effects on carrier lifetime and isochronal annealing of silicon p-n
Instruments
or Electronic Systems
GAMMA RADIATION
IMPURITIES- SILICON
RADIATION EFFECTS ANNEALING- CARRIER LIFETIME- SILICON DIODES
GAMMA RADIATION/effects on carrier lifetime and isochronal annealing of silicon p-n diodes
SILICON/impurity effects on gamma- irradiated crystals of
SEMICONDUCTOR JUNCTIONS/radiation effects on carrier lifetime and isochronal annealing of silicon p-n