The influence of strengthening mechanisms on stress relaxation in thin aluminum metallization
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
- EG and G IC Sensors, Milpitas, CA (United States)
The objective of this research is to identify ways of strengthening aluminum thin films for use in bimetallic actuators. With the development of microelectromechanical systems there is a need for stronger aluminium thin films that resist stress relaxation. A number of strengthening mechanisms are used extensively for bulk aluminum alloys, but very few have been used to improve the performance of thin films. Pure aluminum, standard microelectronics metallization (Al-.04Cu-.017Si), alloy T201 (Al-.046Cu-.006Ag-.004Mn-.003Mg-.003Ti), and alloy 2090 (Al-.026Cu-.021Li-.001Zr) were electron beam evaporated or sputter deposited onto (100) silicon substrates. Stress versus temperature and stress relaxation were measured in the films. Pure aluminum and AlSiCu alloy films exhibited plastic deformation at low stresses and low temperatures. The T201 and 2090 films exhibited residual elastic stresses at room temperature of 350 MPa and 500 MPa, and did not plastically deform until 240 C at 100 MPa stress, or 270 C at 200 MPa stress, respectively. The T201 film also showed a low stress relaxation rate. The authors speculate that solid solution strengthening caused the increase in strength of the T201 film, and that age hardening caused the increase in strength of the 2090 film.
- Sponsoring Organization:
- Defense Advanced Research Projects Agency, Arlington, VA (United States)
- OSTI ID:
- 467576
- Report Number(s):
- CONF-960401--; ISBN 1-55899-339-8
- Country of Publication:
- United States
- Language:
- English
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