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Intercalation of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystal with C{sub 60}: Characterization and micro-Raman investigation

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.364245· OSTI ID:467210
; ;  [1];  [2];  [3]
  1. IP D, Institute for Research and Development, UNIVAP, Universidade do Vale do Paraiba, CEP 12245-720, San Jose Dos Campos, SP (Brazil)
  2. Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0032 (United States)
  3. Department of Solid State Chemistry, IMS Okazaki (Japan)
Micro-Raman and corroborative photoluminescence (PL); infrared (IR) absorption; scanning tunneling microscopy/spectroscopy (STM/STS) and x-ray diffraction (XRD) studies on the intercalation of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} (Bi-2212, host) with C{sub 60} (guest) reveal that intercalation drastically changes vibrational, electronic, and structural characteristics of both the guest and the host species. The predominant changes in vibrational modes such as splitting (651, 668 cm{sup {minus}1}) in the radial mode (at 709 cm{sup {minus}1}); anomalous intensity distribution; and appearance of forbidden modes in the Raman spectra of the guest have been related to the symmetry reduction in the guest sublattice and to the induced resonance effects due to the intercalation process. Further, the changes in Raman spectra corresponding to the host, such as the appearance of a strong Raman mode at 310 cm{sup {minus}1} (in the {nu}{sub Cu{endash}O} region), redshift in the {nu}{sub Bi{endash}O} mode, and the appearance of a band at 1443 cm{sup {minus}1} in the tangential mode region of the guest reveal the formation of semiconducting islands in the host sublattice due to the guest{endash}host electron transfer process. Raman results have been correlated with PL, IR, STM/STS, and XRD data. {copyright} {ital 1997 American Institute of Physics.}
OSTI ID:
467210
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English