Elastic moduli of gallium nitride

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118503· OSTI ID:467166

Schwarz, R B; Khachaturyan, K ^[1]; Weber, E R ^[2]

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1. Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
2. Materials Science Division, Berkeley Laboratory and Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720 (United States)

The second-order elastic constants of wurtzite phase GaN have been measured with 0.2{percent} accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c{sub 11}=377, c{sub 12}=160, c{sub 13}=114, c{sub 33}=209, and c{sub 44}=81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 467166
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELASTICITY
EPITAXY
GALLIUM NITRIDES
LAYERS
RESONANCE
STRESSES
ULTRASONIC TESTING