Charge controlled nanosecond logic circuitry

Journal Article · Sun Sep 01 04:00:00 EDT 1963 · Proceedings of the IEEE

DOI:https://doi.org/10.1109/PROC.1963.2490· OSTI ID:4652943

Sear, B. E.

Nanosecond circuitry can be based mainly on two devices---the transistor and the tunnel diode. Unfortunately, the speed advantages of the tunnel diode cannot be utilized because the current gain is limited by practical tolerance requirements. Therefore, any circuits designed around'' these two devices are either practical, but limited to the speed of the transistor, or impractical, for general purpose logic, with the speed performance of the tunnel diode. The region of the tunnel diode gain bandwidth curve that is limited by tolerances can be exploited by using a storage diode as an interstage current amplifier or charge transformer. The operation of the storage diode is discussed, and charge gain bandwidth criteria are developed from the physical equations describing the device. Charge control switching curves are developed for the tunnel diode that define its operation as a charge amplifier. The combination of tunnel diode and charge transformer (TDCT). Logic enables a wide variety of logic functions to be obtained with a gain bandwidth tolerance performance previously unattainable in nanosecond logic circuitry. To demonstrate this capability a NOR'' circuit is described and a worse-case analysis of the fan-out tolerance performance is given. (auth)

• Research Organization: Martin Co., Baltimore
• Sponsoring Organization: USDOE
• NSA Number: NSA-17-036129
• OSTI ID: 4652943
• Journal Information: Proceedings of the IEEE, Journal Name: Proceedings of the IEEE Journal Issue: 9 Vol. 51; ISSN 0018-9219
• Publisher: Institute of Electrical and Electronics Engineers
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

AMPLIFIERS
CIRCUITS
CONTROL
CURRENTS
DIAGRAMS
ELECTRIC CHARGES
EQUATIONS
INSTRUMENTS AND INSTRUMENTATION
OPERATION
PERFORMANCE
PULSES
SEMICONDUCTORS
SWITCHES
TRANSDUCERS
TRANSISTORS
TUNNEL EFFECT