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Resonance ionization of sputtered atoms: quantitative analysis in the near-surface region of silicon wafers

Conference ·
OSTI ID:464488
;  [1]; ;  [2];  [3]
  1. Argonne National Lab., IL (United States)
  2. Trinity Univ., San Antonio, TX (United States). Dept. of Physics
  3. Lucent Technologies, Orlando, FL (United States)
+ Show Author Affiliations
Identification, measurements of low levels of metallic impurities on Si wafers are difficult due to rapidly changing chemical activity near the surface. Air-exposed Si surfaces typically possess a native oxide layer several atoms thick plus a top monolayer of various Si- containing molecules. Resonance ionization spectroscopy (RIS) used for postionization in secondary neutral mass spectrometry (SNMS) is uniquely suited to this task; the high sensitivity allows detection of metals at parts per billion levels with monolayer sensitivity. The high selectivity of RIS allows unambiguous identification of elements, while the reduced matrix effects of SNMS allow quantification of the photoionized elements. Characterization of Si surfaces using RIS/SNMS was explored by measuring the concentration profiles of Ca in the near-surface region of Si wafers of varying degrees of cleanliness. Ca detection can be problematic due to isobaric interference with SiC, particularly in the near-surface region during fabrication of devices due to use of organic photoresist. Three different resonance ionizations schemes for Ca were examined and compared for effectiveness by calculating detection limits for Ca in Si in the chemically active near-surface region.
Research Organization:
Argonne National Lab., IL (United States)
Sponsoring Organization:
USDOE Office of Energy Research, Washington, DC (United States)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
464488
Report Number(s):
ANL/CHM/CP--90671; CONF-961110--27; ON: DE97003899
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
42 ENGINEERING
CALCIUM
IMPURITIES
RESONANCE IONIZATION MASS SPECTROSCOPY
SEMICONDUCTOR DEVICES
SILICON
SURFACES
TRACE AMOUNTS