CONCENTRATION PROFILES AND ENHANCED DIFFUSION IN ION-IMPLANTED SILICON STUDIED BY RADIOACTIVATION ANALYSIS.
Journal Article
·
· pp 103-10 of Record of the 11th Symposium on Electron, Ion, and Laser Beam Technology. /Thornley, R. F. M. (ed.). New York Inst. of Electrical and Electronics Engineers, Inc. (1971).
OSTI ID:4636740
- Research Organization:
- Osaka Univ.); (and others)
- NSA Number:
- NSA-26-049699
- OSTI ID:
- 4636740
- Journal Information:
- pp 103-10 of Record of the 11th Symposium on Electron, Ion, and Laser Beam Technology. /Thornley, R. F. M. (ed.). New York Inst. of Electrical and Electronics Engineers, Inc. (1971)., Other Information: From 11. symposium on electron, ion, and laser beam technology; Boulder, Colo. (12 May 1971). Orig. Receipt Date: 31-DEC-72
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
N74100* -Physics (Solid State)-Radiation Effects
ACTIVATION ANALYSIS
ANTIMONY IONS
DIFFUSION
DISTRIBUTION
INDIUM IONS
MONOCRYSTALS
RADIOACTIVATION
SILICON
ANTIMONY IONS/implantation in silicon
concentration profiles and enhanced diffusion in
(E)
SILICON/ion implantation in
concentration profiles and enhanced diffusion in antimony-
(E)
SILICON/ion implantation in
concentration profiles and enhanced diffusion in indium-
(E)
INDIUM IONS/implantation in silicon
concentration profiles and enhanced diffusion in
(E)
ACTIVATION ANALYSIS
ANTIMONY IONS
DIFFUSION
DISTRIBUTION
INDIUM IONS
MONOCRYSTALS
RADIOACTIVATION
SILICON
ANTIMONY IONS/implantation in silicon
concentration profiles and enhanced diffusion in
(E)
SILICON/ion implantation in
concentration profiles and enhanced diffusion in antimony-
(E)
SILICON/ion implantation in
concentration profiles and enhanced diffusion in indium-
(E)
INDIUM IONS/implantation in silicon
concentration profiles and enhanced diffusion in
(E)