Ordering of As impurities in a Si dislocation core

Journal Article · Tue Dec 31 23:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118407· OSTI ID:463430

Maiti, A; Kaplan, T; Mostoller, M; Chisholm, M F; Pennycook, S J ^[1]; Pantelides, S T ^[2]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
2. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)

We demonstrate by {ital ab initio} calculations that segregation of As in a dislocation core in Si occurs in the form of an ordered chain of As atoms running along the dislocation pipe. All As atoms in the chain achieve threefold coordination and the segregation energy is close to 1 eV per As atom. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 463430
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC ADDITIONS
DEFORMATION
DISLOCATIONS
DOPED MATERIALS
PLASTICITY
SEGREGATION
SILICON
TRACE AMOUNTS
impurity-defect interactions