Thermal-shock behavior of advanced ceramic/composite hot-gas filters

Conference · Sat Feb 01 04:00:00 EST 1997

OSTI ID:459899

Singh, J P; Sutaria, M; Bielke, W

The thermal shock/fatigue behavior of monolithic and composite hot-gas candle filters obtained from various manufacturers was evaluated. The composite filters were made of both oxide and nonoxide materials; the monolithic filters were made only of nonoxide materials. During single-cycle thermal shock tests, composite filters show little or no strength degradation when quenched from temperatures between 900 and 1000{degrees}C. At higher quenching temperatures, slow strength degradation was observed. Regular monolithic SiC filters showed no strength degradation when quenched from temperatures up to {approx}700-900{degrees}C, whereas at higher quenching temperatures, the strength decreased at a relatively sharper rate. On the other hand, recrystallized monolithic SiC filters showed higher initial strength and retained this strength to higher quenching temperatures when compared with regular SiC filters. This finding may be related to the difference in the strength of grain boundary phases in the two filters. For thermal cycles between room temperature and 800-1000{degrees}C, composite filters show little (18-24%) strength degradation up to three cycles, beyond which the strength remains unchanged. Similar behavior, with an initial strength drop of 15-28%, was observed for monolithic filter specimens that were thermally cycled between room temperature and 800{degrees}C.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Fossil Energy, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 459899
• Report Number(s): ANL/ET/CP--90785; CONF-970111--9; ON: DE97004090
• Country of Publication: United States
• Language: English

Related Subjects

01 COAL, LIGNITE, AND PEAT
36 MATERIALS SCIENCE
FATIGUE
FILTERS
GASKETS
HOT GAS CLEANUP
MECHANICAL PROPERTIES
QUENCHING
SILICON CARBIDES
TEMPERATURE DEPENDENCE
THERMAL SHOCK