Quantum cascade light emitting diodes based on type-II quantum wells

Conference · Mon Jan 20 23:00:00 EST 1997

OSTI ID:459395

Lin, C H; Yang, R Q; Zhang, D; Murry, S J; Pei, S S ^[1]; Allerman, A A; Kurtz, S R ^[2]

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1. Univ. of Houston, TX (United States). Space Vacuum Epitaxy Center
2. Sandia National Labs., Albuquerque, NM (United States)

The authors have demonstrated room-temperature CW operation of type-II quantum cascade (QC) light emitting diodes at 4.2 {micro}m using InAs/InGaSb/InAlSb type-II quantum wells. The type-II QC configuration utilizes sequential multiple photon emissions in a staircase of coupled type-II quantum wells. The device was grown by molecular beam epitaxy on a p-type GaSb substrate and was compared of 20 periods of active regions separated by digitally graded quantum well injection regions. The maximum average output power is about 250 {micro}W at 80 K, and 140 {micro}W at 300 K at a repetition rate of 1 kHz with a duty cycle of 50%.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Financial Management and Controller, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 459395
• Report Number(s): SAND--97-0347C; CONF-970231--6; ON: DE97003207; CNN: Contract NAGW-977
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
AMBIENT TEMPERATURE
ELECTROLUMINESCENCE
HETEROJUNCTIONS
INFRARED RADIATION
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
OPERATION
PERFORMANCE
SUBSTRATES